FDC6312P applications ? power management ? load switch features ? ?2.3 a, ?20 v. r ds(on) = 115 m ? @ v gs = ?4.5 v r ds(on) = 155 m ? @ v gs = ?2.5 v r ds(on) = 225 m ? @ v gs = ?1.8 v ? high performance trench technology for extremely low r ds(on) ? supersot tm -6 package: small footprint (72% smaller than standard so-8); low profile (1mm thick) d1 s2 g1 d2 s1 g2 supersot -6 tm 3 2 1 4 5 6 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ?2.3 a ? pulsed ?7 power dissipation for single operation (note 1a) 0.96 (note 1b) 0.9 p d (note 1c) 0.7 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 130 c/w r jc thermal resistance, junction-to-case (note 1) 60 c/w package marking and ordering information device marking device reel size tape width quantity .312 FDC6312P 13?? 12mm 3000 units smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?11 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?8 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.9 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 2 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?2.3 a v gs = ?2.5 v, i d = ?1.9 a v gs = ?1.8 v, i d = ?1.6 a v gs =?4.5 v, i d =?2.3a, t j =125 c 92 116 166 112 115 155 225 150 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?7 a g fs forward transconductance v ds = ?5 v, i d = ?3.5 a 5.3 s dynamic characteristics c iss input capacitance 467 pf c oss output capacitance 85 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 38 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 13 23 ns t d(off) turn?off delay time 18 32 ns t f turn?off fall time v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 816ns q g total gate charge 4.4 7 nc q gs gate?source charge 1.0 nc q gd gate?drain charge v ds = ?10 v, i d = ?2.3 a, v gs = ?4.5 v 0.8 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.8 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.8 a (note 2) ?0.7 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 130 c/w when mounted on a 0.125 in 2 pad of 2 oz. copper. b) 140/w when mounted on a .004 in 2 pad of 2 oz copper c) 180/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDC6312P smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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